| 摘要 |
[Problems to be Solved] The object is to provide a cleaning liquid composition, which suppresses damage to a low-dielectric constant interlayer dielectric film, a wiring material, such as copper or a copper alloy, a barrier metal, and a barrier dielectric film and removes an organosiloxane thin film, a dry etching residue and a photoresist on a treatment target surface in a process for producing a semiconductor device, as well as a cleaning method for a semiconductor device using the same, and a production process for a semiconductor device using the same. [Solution] A cleaning liquid composition for producing a semiconductor device according to the invention contains 0.05 to 25 % by weight of a quaternary ammonium hydroxide, 0.001 to 1.0 % by weight of potassium hydroxide, 5 to 85 % by weight of a water-soluble organic solvent, and 0.0005 to 10 % by weight of pyrazoles. |
