发明名称 |
METHOD FOR MANUFACTURING MASK BLANK SUBSTRATE, METHOD FOR MANUFACTURING MASK BLANK AND METHOD FOR MANUFACTURING TRANSFER MASK |
摘要 |
A method for manufacturing a low-defect and high-quality mask blank substrate with minimized transfer pattern defects and high mechanical strength, particularly such that the occurrence of a phenomenon where a portion of a transfer pattern and a principal surface of the substrate therebeneath are broken off together is minimized such that there is little pattern loss. The mask blank is manufactured by preparing a mask blank substrate (X) having a substrate principal surface (X1) polished using a polishing solution containing abrasive grains, etching the substrate principal surface (X1) using catalyst-referred etching so as to remove damaged portions from the principal surface (X1), and then depositing a thin film that forms a transfer pattern on the substrate principal surface (X1) of the substrate (X) by sputtering. |
申请公布号 |
SG11201505421S(A) |
申请公布日期 |
2015.08.28 |
申请号 |
SG11201505421S |
申请日期 |
2014.01.08 |
申请人 |
HOYA CORPORATION |
发明人 |
YAMADA, TAKEYUKI;NISHIMURA, TAKAHITO |
分类号 |
G03F1/82;B01J23/42;G03F1/50;H01L21/027 |
主分类号 |
G03F1/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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