RATE-ENHANCED CMP COMPOSITIONS FOR DIELECTRIC FILMS

摘要

THE INVENTION PROVIDES A CHEMICAL-MECHANICAL POLISHING COMPOSITION CONSISTING ESSENTIALLY OF SILICA, AN OXIDIZING AGENT, A QUATERNARY AMMONIUM COMPOUND, AND WATER. THE INVENTION FURTHER PROVIDES A METHOD OF CHEMICALLY ? MECHANICALLY POLISHING A SUBTRATE WITH THE AFOREMENTIONED POLISHING COMPOSITION. THE POLISHING COMPOSITION PROVIDES FOR ENHANCED POLISHING RATES WHEN USED TO POLISH DIELECTRIC FILMS.