| 发明名称 |
VARIABLE RESISTANCE MEMORY DEVICE AND RELATED PROGRAMMING METHOD DESIGNED TO REDUCE PEAK CURRENT |
| 摘要 |
A method is provided for programming a nonvolatile memory device comprising a variable resistance memory cell connected to a bitline and a wordline. The method comprises precharging the bitline to a first bias voltage, precharging the wordline to a second bias voltage, wherein a voltage difference between the first bias voltage and the second bias voltage is less than a threshold voltage of the memory cell, and applying a first write voltage to the bitline and a second write voltage to the wordline in response to a select signal, wherein a voltage difference between the first write voltage and the second write voltage is greater than the threshold voltage. |
| 申请公布号 |
US2015243355(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414532105 |
申请日期 |
2014.11.04 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE YONGKYU;LEE YEONGTAEK |
| 分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of programming a nonvolatile memory device comprising a variable resistance memory cell connected to a bitline and a wordline, the method comprising:
precharging the bitline to a first bias voltage; precharging the wordline to a second bias voltage, wherein a voltage difference between the first bias voltage and the second bias voltage is less than a threshold voltage of the memory cell; and applying a first write voltage to the bitline and a second write voltage to the wordline in response to a select signal, wherein a voltage difference between the first write voltage and the second write voltage is greater than the threshold voltage. |
| 地址 |
SUWON-SI KR |
