发明名称 MAGNETIC RECORDING AND REPRODUCING DEVICE
摘要 According to one embodiment, a magnetic recording and reproducing device includes magnetic recording medium and a magnetic head. The magnetic recording medium includes a first surface. A plurality of bits is provided in the first surface. Each of the bits has a direction of magnetization corresponding to recorded information. The magnetic head includes a reproducing unit. The reproducing unit senses the direction of magnetization. The reproducing unit includes a first shield, a second shield, a first magnetic layer, a second magnetic layer, a third magnetic layer, a fourth magnetic layer, an intermediate layer, a first nonmagnetic layer, and a second nonmagnetic layer. The first and the second nonmagnetic layers include at least one selected from ruthenium, copper, and tantalum. A distance between the first shield and the second shield is not less than 3 times and not more than 7 times a length of each of the bits.
申请公布号 US2015243308(A1) 申请公布日期 2015.08.27
申请号 US201514627003 申请日期 2015.02.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAGISHI Masayuki;IWASAKI Hitoshi;YAMADA Kenichiro;ISOWAKI Yousuke;HARADA Kohsuke
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项 1. A magnetic recording and reproducing device, comprising: a magnetic recording medium including a first surface, a plurality of bits being provided in the first surface, each of the bits having a direction of magnetization corresponding to recorded information; and a magnetic head including a reproducing unit having a second surface opposing the first surface, the reproducing unit sensing the direction of magnetization, the reproducing unit including: a first shield;a second shield separated from the first shield in a first direction parallel to the second surface;a first magnetic layer provided between the first shield and the second shield, a direction of magnetization of the first magnetic layer being fixed;a second magnetic layer provided between the first magnetic layer and the second shield, a direction of magnetization of the second magnetic layer being changeable;a third magnetic layer provided between the first shield and the first magnetic layer, a direction of magnetization of the third magnetic layer being changeable;a fourth magnetic layer provided between the second magnetic layer and the second shield, a direction of magnetization of the fourth magnetic layer being changeable;an intermediate layer provided between the first magnetic layer and the second magnetic layer;a first nonmagnetic layer provided between the first shield and the third magnetic layer, the first nonmagnetic layer including at least one selected from ruthenium, copper, and tantalum; anda second nonmagnetic layer provided between the fourth magnetic layer and the second shield, the second nonmagnetic layer including at least one selected from ruthenium, copper, and tantalum, a first distance between the first shield and the second shield being not less than 3 times and not more than 7 times a length of each of the bits along the first direction, a length along the first direction of the first nonmagnetic layer being 2 nanometers or less.
地址 Tokyo JP