HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

摘要

Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

主权项

1. A light emitting diode (LED), comprising:
a substrate; a semiconductor stack disposed on the substrate, the semiconductor stack comprising:
a p-type semiconductor layer;an active layer; andan n-type semiconductor layer; a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack; a first electrode pad disposed on the semiconductor stack; an electrode extension extending from the first electrode pad, the electrode extension comprising a contact region that directly contacts the n-type semiconductor layer; a first insulating layer interposed between the substrate and the semiconductor stack, the first insulating layer covering a first region of the p-type semiconductor layer under the contact region of the electrode extension; and a second insulating layer interposed between the first electrode pad and the semiconductor stack, such that the second insulating layer prevents the first electrode pad from directly contacting the semiconductor stack, wherein the substrate comprises:
a second metal layer comprising at least one of tungsten (W) and molybdenum (Mo);third metal layers arranged on first and second surfaces of the second metal layer, respectively, the third metal layers comprising a higher thermal expansion coefficient than the second metal layer; andadhesive layers interposed between the second metal layer and the third metal layers, respectively, the adhesive layers comprising at least one of nickel (Ni), titanium (Ti), chromium (Cr), and platinum (Pt), wherein the first insulating layer comprises at least one groove exposing the semiconductor stack, wherein the first metal layer is interposed between the first insulating layer and the substrate, and is ohmic-contacted with the semiconductor stack by filling the at least one groove.