THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME

摘要

Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

主权项

1. A display, comprising:
a first thin film transistor, the first thin film transistor comprising:
a polycrystalline semiconductor layer;a first gate electrode on the polycrystalline semiconductor layer;a first source electrode; anda first drain electrode; a second thin film transistor, the second thin film transistor comprising:
a second gate electrode;an oxide semiconductor layer on the second gate electrode;a second source electrode; anda second drain electrode; an intermediate insulating layer comprising a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer; and an etch-stopper layer disposed on the oxide semiconductor layer.