SEMICONDUCTOR DEVICE, SEMICONDUCTOR STACKED MODULE STRUCTURE, STACKED MODULE STRUCTURE AND METHOD OF MANUFACTURING SAME

摘要

A semiconductor device, having an insulating substrate; a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards; a first insulating material layer which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto; a first metal thin film wire layer which is provided on the first insulating material layer (A) and a portion of which is exposed to an external surface; a first insulating material layer (B) which is provided on the first metal thin film wire layer; a second insulating material layer which is provided on a main surface of the insulating substrate where the semiconductor element is not mounted; and a second metal thin film wire layer which is provided inside the second insulating material layer.

主权项

1. A semiconductor device, having:
an insulating substrate; a semiconductor element which is mounted on one main surface of the insulating substrate via adhesive, with an element circuit surface of the semiconductor element facing upwards; a first insulating material layer (A) which seals the element circuit surface of the semiconductor element and the insulating substrate peripheral thereto; a first metal thin film wire layer which is provided on the first insulating material layer (A) and a portion of which is exposed to an external surface; a first insulating material layer (B) which is provided on the first metal thin film wire layer; a second insulating material layer which is provided on a main surface of the insulating substrate where the semiconductor element is not mounted; a second metal thin film wire layer which is provided inside the second insulating material layer and a portion of which is exposed to an external surface; a via which passes through the insulating substrate and which electrically connects the first metal thin film wire layer in the first insulating material layer (A) and the second metal thin film wire layer; and an external electrode which is formed on the first metal thin film wire layer, the semiconductor device having a structure in which the second metal thin film wire layer, an electrode arranged on the element circuit surface of the semiconductor element, the first metal thin film wire layer, the via and the external electrode formed on the first metal thin film wire layer are electrically connected.