发明名称 REDUCING THERMAL ENERGY TRANSFER DURING CHIP-JOIN PROCESSING
摘要 Embodiments of the present invention provide a semiconductor structure and method to reduce thermal energy transfer during chip-join processing. In certain embodiments, the semiconductor structure comprises a thermal insulating element formed under a first conductor. The semiconductor structure also comprises a solder bump formed over the first conductor. The semiconductor structure further comprises a second conductor formed on a side of the thermal insulating element and in electrical communication with the first conductor and a third conductor. The third conductor is formed to be in thermal or electrical communication with the thermal insulating element. The thermal insulating element includes thermal insulating material and the thermal insulating element is structured to reduce thermal energy transfer during a chip-join process from the solder bump to a metal level included in the semiconductor structure.
申请公布号 US2015243618(A1) 申请公布日期 2015.08.27
申请号 US201414191857 申请日期 2014.02.27
申请人 International Business Machines Corporation 发明人 Ayotte Stephen P.;Quesnel Sebastien;Richard Glen E.;Sullivan Timothy D.;Sullivan Timothy M.
分类号 H01L23/00;H01L23/373;H01L23/367 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor structure comprising: an insulating layer having a first surface and a second surface opposite the first surface; a thermal insulating element extending vertically through the insulating layer from the first surface to the second surface, the thermal insulating element and the insulating layer comprising different insulating materials and the thermal insulating element comprising a thermal insulating material; a first conductor on the second surface of the insulating layer and immediately adjacent to the thermal insulating element; a solder bump on the first conductor; a second conductor extending vertically through the insulating layer from the first surface to the second surface, the second conductor being immediately adjacent to the first conductor and further being positioned laterally adjacent to the thermal insulating element; and a third conductor on the first surface of the insulating layer and immediately adjacent to the thermal insulating element and the second conductor, the thermal insulating element reducing thermal energy transfer during a chip-join process from the solder bump to a metal level in the semiconductor structure.
地址 Armonk NY US