| 发明名称 |
Decreased Switching Current in Spin-Transfer Torque Memory |
| 摘要 |
Switching current in Spin-Transfer Torque Memory (STTM) can be decreased. A magnetic memory cell is driven with a first pulse on a write line of the memory cell to heat the cell. The cell is then driven with a second pulse on the write line to set the state of the cell. |
| 申请公布号 |
US2015243336(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201314431607 |
申请日期 |
2013.06.10 |
| 申请人 |
KARPOV Elijah V.;DOYLE Brian S.;OGUZ Kaan;SURI Satyarth;CHAU Robert S.;KUO Charles C.;DOCZY Mark L.;KENCKE David L.;INTEL CORPORATION |
发明人 |
Karpov Elijah V.;Doyle Brian S.;Oguz Kaan;Suri Satyarth;Chau Robert S.;Kuo Charles S.;Doczy Mark L.;Kencke David L. |
| 分类号 |
G11C11/16;H01L43/08;H01L43/02 |
主分类号 |
G11C11/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
driving a magnetic memory cell with a heat pulse having a first voltage on a write line of the memory cell to heat the cell; driving the cell with a program pulse having a second voltage less than the first voltage on the write line to set the state of the cell, wherein the program pulse is configured to allow the cell to cool to a stable state. |
| 地址 |
Portland OR US |
