| 发明名称 |
SYSTEM AND METHOD FOR PATTERN CORRECTION IN E-BEAM LITHOGRAPHY |
| 摘要 |
The present disclosure provides a method for pattern correction for electron-beam (e-beam) lithography. In accordance with some embodiments, the method includes splitting a plurality of patterns into a plurality of pattern types; performing model fittings to determine a plurality of models for the plurality of pattern types respectively; and performing a pattern correction to an integrated circuit (IC) layout using the plurality of models. |
| 申请公布号 |
US2015242562(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414192523 |
申请日期 |
2014.02.27 |
| 申请人 |
Taiwan Semiconductor Manfacturing Company, Ltd. |
发明人 |
WANG Hung-Chun;HUANG Hsu-Ting;HUANG Wen-Chun;LIU Ru-Gun |
| 分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for pattern correction for electron-beam (e-beam) lithography, comprising:
splitting a plurality of patterns into a plurality of pattern types; performing model fittings to determine a plurality of models for the plurality of pattern types respectively; and performing a pattern correction to an integrated circuit (IC) layout using the plurality of models. |
| 地址 |
Hsin-Chu TW |
