发明名称 FLASH MEMORY SYSTEM AND METHOD CONTROLLING SAME
摘要 A flash memory system includes; a controller that determines at least one parameter related to data reliability based on temperature information and generates a control signal based on the at least one parameter; and a memory device that comprises one or more memory cell arrays and provides the controller with read data corresponding to a read command received from the controller.
申请公布号 US2015242143(A1) 申请公布日期 2015.08.27
申请号 US201514602464 申请日期 2015.01.22
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KYUNG-JIN;KIM GEUN-SOO;KONG JUN-JIN
分类号 G06F3/06;G06F11/07 主分类号 G06F3/06
代理机构 代理人
主权项 1. A flash memory system comprising: a controller that determines a data reliability parameter based on temperature information and generates a control signal in response to the data reliability parameter; and a memory device including a flash memory cell array that provides the controller with read data corresponding to a read command received from the controller, wherein the memory device performs an operation in response to the control signal generated in response to the data reliability parameter.
地址 Suwon-Si KR