发明名称 |
FLASH MEMORY SYSTEM AND METHOD CONTROLLING SAME |
摘要 |
A flash memory system includes; a controller that determines at least one parameter related to data reliability based on temperature information and generates a control signal based on the at least one parameter; and a memory device that comprises one or more memory cell arrays and provides the controller with read data corresponding to a read command received from the controller. |
申请公布号 |
US2015242143(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514602464 |
申请日期 |
2015.01.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KYUNG-JIN;KIM GEUN-SOO;KONG JUN-JIN |
分类号 |
G06F3/06;G06F11/07 |
主分类号 |
G06F3/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. A flash memory system comprising:
a controller that determines a data reliability parameter based on temperature information and generates a control signal in response to the data reliability parameter; and a memory device including a flash memory cell array that provides the controller with read data corresponding to a read command received from the controller, wherein the memory device performs an operation in response to the control signal generated in response to the data reliability parameter. |
地址 |
Suwon-Si KR |