发明名称 |
CMOS IMAGE SENSORS HAVING A TRANSFER GATE ELECTRODE, AND METHODS OF FABRICATING CMOS IMAGE SENSORS HAVING A TRANSFER GATE ELECTRODE |
摘要 |
Complementary metal-oxide-semiconductor (CMOS) image sensors are provided. A CMOS image sensor includes a substrate including a pixel array and a peripheral circuit region, a photodiode and a floating diffusion region in the pixel array of the substrate, a transfer gate insulating layer and a transfer gate electrode on the substrate between the photodiode and the floating diffusion region, and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region. The transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature smaller than the first radius of curvature. |
申请公布号 |
US2015243701(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414478374 |
申请日期 |
2014.09.05 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Oh Young-Sun;Lee Kyung-Ho;Jeong Hee-Geun |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
1. A complementary metal-oxide-semiconductor (CMOS) image sensor comprising:
a substrate including a pixel array and a peripheral circuit region; a photodiode and a floating diffusion region in the pixel array of the substrate; a transfer gate insulating layer and a transfer gate electrode on a portion of the substrate that is between the photodiode and the floating diffusion region; and a peripheral gate insulating layer and a peripheral gate electrode on the peripheral circuit region, wherein the transfer gate electrode includes a first edge that is rounded to have a first radius of curvature, and wherein the peripheral gate electrode includes a second edge that is rounded to have a second radius of curvature shorter than the first radius of curvature. |
地址 |
Suwon-si KR |