DEVICE AND METHOD FOR REPAIRING MEMORY CELL AND MEMORY SYSTEM INCLUDING THE DEVICE

摘要

Provided are a method and an apparatus for repairing a memory cell in a memory test system. A test device detects a fail address by testing a memory device according to a test command, and temporarily stores the fail address in a fail address memory (FAM). The fail address is transmitted to the memory device according to a fail address transmission mode, is temporarily stored in a temporary fail address storage of the memory device, and is then stored in an anti-fuse array, which is a non-volatile storage device. To secure the reliability of data, stored data can be read to verify the data and a verification result can be transmitted in series or in parallel to the test device.

主权项

1. A memory device comprising:
an array of memory cells configured for storing data; and a non-volatile memory (NVM) storage array configured for storing a fail address indicating a failed memory cell from the array of memory cells; a temporary fail address storage (TFAS) device, configured to temporarily store the fail address; and a control unit coupled to the TFAS device and the NVM storage array.