Chemical Amplification Methods and Techniques for Developable Bottom Anti-reflective Coatings and Dyed Implant Resists

摘要

The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films (e.g., photoresist on anti-reflective coatings) on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV or UV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located in the film stack. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

主权项

1. A method for treating a substrate, comprising:
receiving the substrate comprising an underlying layer on a surface of the substrate an anti-reflective coating (ARC) layer on the underlying layer, and a photoresist layer on the ARC layer, the ARC layer comprising:
a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the ARC layer; anda second light wavelength activation threshold that increase the first acid concentration to a second acid concentration, the second light wavelength being different from the first light wavelength; exposing a first wavelength of light onto the substrate, the first exposure being a patterned exposure of the substrate, wherein the first exposure generates a first concentration of acid in the ARC layer; exposing a second wavelength of light onto the substrate, the second exposure being a blanket exposure of the substrate, wherein the second exposure generates a second concentration of the acid in the ARC layer, the second concentration being higher than the first concentration; and developing the anti-reflective coating layer to generate an one or more openings in the ARC layer that are aligned with the patterned exposure.