摘要 |
Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products. |
申请人 |
ENTEGRIS, INC. |
发明人 |
BAUM, THOMAS, H.;BATTLE, SCOTT, L.;CLEARY, JOHN, M.;PETERS, DAVID, W.;CHEN, PHILIP, S. H. |