发明名称 COBALT PRECURSORS
摘要 Cobalt precursors are described, having application for vapor deposition of cobalt on substrates, such as in atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes for forming interconnects, capping structures, and bulk cobalt conductors, in the manufacture of integrated circuitry and thin film products.
申请公布号 WO2015127092(A1) 申请公布日期 2015.08.27
申请号 WO2015US16635 申请日期 2015.02.19
申请人 ENTEGRIS, INC. 发明人 BAUM, THOMAS, H.;BATTLE, SCOTT, L.;CLEARY, JOHN, M.;PETERS, DAVID, W.;CHEN, PHILIP, S. H.
分类号 C01G51/00;H01L21/205 主分类号 C01G51/00
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