| 摘要 |
FIELD: measurement equipment.SUBSTANCE: invention relates to a thermal analysis of substances and can be used for determination of content of metallic substances in semiconductor materials. A method for determining the content of metallic inclusions in semiconductor materials consists in cooling of preheated test and standard substances placed on sensors from anisotropic elements with thermoelectric properties. Differential heat flow due to temperature is measured, and the target value is determined on this relation as per the value of surges. With that, the standard and the test specimen prepared in the form of a powder with weight of ?1 mg and with dispersion of ?0.1 mg are located directly on thermal sensors. Then, they are heated by action of an infrared laser with wave length of 10.6 mcm during 1-5 seconds by 100-200 degrees higher than fusion temperature of gallium microinclusions. Then, quenching of molten gallium is performed at the same speed so that liquid phase ?-Ga is formed. Then, the target dependence is read out at thermoelectric cooling in the region of crystallisation temperatures of phase ?-Ga at the temperature of -25°C and at conversion of ?-Ga to ?-Ga at the temperature of -90°C.EFFECT: increasing sensitivity of determination of gallium microinclusions to control quality of semiconductor materials.3 dwg |
