发明名称 MEMS MICROPHONE DEVICE
摘要 A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.
申请公布号 US2015245146(A1) 申请公布日期 2015.08.27
申请号 US201514620961 申请日期 2015.02.12
申请人 SENSOR TEK Co., Ltd. 发明人 LIU Mao-Chen;CHAO Hao-Ming;CHOU Wen-Chieh;LU Po-Wei;WENG Shu-Yi;WANG Chun-Chieh
分类号 H04R17/02;B81B3/00 主分类号 H04R17/02
代理机构 代理人
主权项 1. A Micro Electro Mechanical System (MEMS) microphone device, comprising: a substrate having a first penetrating portion; a MEMS microphone thin film above the substrate, and covering the first penetrating portion and defining a first cavity, the MEMS microphone thin film comprising: an elastic portion defined in the center area of the MEMS microphone thin film; anda connection portion defined in the edge area of the MEMS microphone thin film and partially connected with the elastic portion, a plurality of first slots surrounding the elastic portion defined between the connection portion and the elastic portion; and an oxide layer having a second penetrating portion and connected with the connection portion of the MEMS microphone thin film, the second penetrating portion exposing at least part of the MEMS microphone thin film.
地址 Taipei City TW