发明名称 |
METHOD AND APPARATUS FOR MOS DEVICE WITH DOPED REGION |
摘要 |
A semiconductor device is provided. The device may include a semiconductor layer; and a doped well disposed in the semiconductor layer and having a first conductivity type. The device may also include a drain region, a source region, and a body region, where the source and body regions may operate in different voltages. Further, the device may include a first doped region having a second conductivity type, the first doped region disposed between the source region and the doped well; and a second doped region having the first conductivity type and disposed under the source region. The device may include a third doped region having the second conductivity type and disposed in the doped well; and a fourth doped region disposed above the third doped region, the fourth doped region having the first conductivity type. Additionally, the device may include a gate and a field plate. |
申请公布号 |
US2015243783(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414192097 |
申请日期 |
2014.02.27 |
申请人 |
Vanguard International Semiconductor Corporation |
发明人 |
Lee Tsung-Hsiung;Lin Shin-Cheng |
分类号 |
H01L29/78;H01L29/66;H01L29/40;H01L21/265;H01L29/08;H01L29/10 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a semiconductor layer; a doped well disposed in the semiconductor layer and having a first conductivity type; a drain region disposed in the doped well; a source region and a body region disposed in the semiconductor layer; a first doped region having a second conductivity type, the first doped region disposed between the source region and the doped well; a second doped region having the first conductivity type and disposed under the source region; a third doped region having the second conductivity type and disposed in the doped well; and a fourth doped region disposed in the doped well and above the third doped region, the fourth doped region having the first conductivity type. |
地址 |
Hsinchu TW |