发明名称 |
SEMICONDUCTOR OPTICAL DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR OPTICAL DEVICE |
摘要 |
A semiconductor optical device includes a substrate including first and second regions arranged in a first direction, a photodiode disposed on the first region, an optical waveguide disposed on the second region, and a buried layer disposed on a side surface of the photodiode. The side surface of the photodiode extends in the first direction. The photodiode has a first end surface intersecting with the first direction, and the optical waveguide is in direct contact with the first end surface. The buried layer is composed of a III-V compound semiconductor doped with a transition metal. The photodiode includes a stacked semiconductor layer including a first cladding layer, a light-absorbing layer and a second cladding layer stacked in that order on the substrate. The light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer. |
申请公布号 |
US2015241648(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514627885 |
申请日期 |
2015.02.20 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
KIKUCHI Takehiko;YAGI Hideki;YONEDA Yoshihiro |
分类号 |
G02B6/42;H01L31/18 |
主分类号 |
G02B6/42 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor optical device comprising:
a substrate including a first region and a second region that are arranged in a first direction; a photodiode disposed on the first region of the substrate, the photodiode having a first end surface and a second end surface opposite to the first end surface, the first end surface extending along a reference plane intersecting with the first direction; an optical waveguide disposed on the second region of the substrate, the optical waveguide being in direct contact with the first end surface of the photodiode at a first butt-joint portion; and a buried layer disposed on a side surface of the photodiode that extends in the first direction, the buried layer being composed of a III-V compound semiconductor doped with a transition metal, wherein the photodiode includes a stacked semiconductor layer including a first cladding layer disposed on the substrate, a light-absorbing layer disposed on the first cladding layer, and a second cladding layer disposed on the light-absorbing layer, and the light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer. |
地址 |
Osaka JP |