发明名称 Semiconductor Device with Plated Lead Frame, and Method for Manufacturing Thereof
摘要 A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices.
申请公布号 US2015243591(A1) 申请公布日期 2015.08.27
申请号 US201414190952 申请日期 2014.02.26
申请人 Infineon Technologies AG 发明人 von Koblinski Carsten;Fastner Ulrike;Brockmeier Andre;Zorn Peter
分类号 H01L23/495;H01L21/52;H01L21/78 主分类号 H01L23/495
代理机构 代理人
主权项 1. A method for manufacturing semiconductor devices, comprising: providing a carrier substrate having a first side, a second side and a plurality of receptacles each for receiving and carrying a semiconductor chip, the receptacles extending from the first side to the second side of the carrier substrate; placing semiconductor chips each having a first side and a second side in the receptacles, wherein the receptacles leave at least portions of the first side and of the second side of the semiconductor chips exposed; plating metal in the receptacles to form a metal structure on and in contact with the second side of the semiconductor chips; and cutting through the carrier substrate to form separate semiconductor devices.
地址 Neubiberg DE