发明名称 |
Semiconductor Device with Plated Lead Frame, and Method for Manufacturing Thereof |
摘要 |
A carrier substrate having a plurality of receptacles each for receiving and carrying a semiconductor chip is provided. Semiconductor chips are arranged in the receptacles, and metal is plated in the receptacles to form a metal structure on and in contact with the semiconductor chips. The carrier substrate is cut to form separate semiconductor devices. |
申请公布号 |
US2015243591(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414190952 |
申请日期 |
2014.02.26 |
申请人 |
Infineon Technologies AG |
发明人 |
von Koblinski Carsten;Fastner Ulrike;Brockmeier Andre;Zorn Peter |
分类号 |
H01L23/495;H01L21/52;H01L21/78 |
主分类号 |
H01L23/495 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method for manufacturing semiconductor devices, comprising:
providing a carrier substrate having a first side, a second side and a plurality of receptacles each for receiving and carrying a semiconductor chip, the receptacles extending from the first side to the second side of the carrier substrate; placing semiconductor chips each having a first side and a second side in the receptacles, wherein the receptacles leave at least portions of the first side and of the second side of the semiconductor chips exposed; plating metal in the receptacles to form a metal structure on and in contact with the second side of the semiconductor chips; and cutting through the carrier substrate to form separate semiconductor devices. |
地址 |
Neubiberg DE |