HYBRID WAFER DICING APPROACH USING TEMPORALLY-CONTROLLED LASER SCRIBING PROCESS AND PLASMA ETCH

摘要

Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a temporally-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The temporally-controlled laser scribing process involves scribing with a laser beam having a profile comprising a leading femto-second portion and a trailing lower-intensity, higher fluence portion. The method also involves plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.

主权项

1. A method of dicing a semiconductor wafer comprising a plurality of integrated circuits, the method comprising:
forming a mask above the semiconductor wafer, the mask comprising a layer covering and protecting the integrated circuits; patterning the mask with a temporally-controlled laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits, wherein the temporally-controlled laser scribing process comprises scribing with a laser beam having a profile comprising a leading femto-second portion and a trailing portion, wherein the leading femto-second portion has a first intensity and a first fluence, the trailing portion has a second intensity and a second fluence, the second intensity is lower than the first intensity, and the first fluence is lower than the second fluence; and plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits.