| 发明名称 |
PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USAGE OF SINGLE CRYSTAL MATERIAL |
| 摘要 |
The invention relates to a method for fabricating a pseudo-substrate comprising the steps of providing a single crystal ingot, providing a handle substrate, cutting a thin slice from the single crystal ingot, and attaching the thin slice to the handle substrate to form a pseudo-substrate. According to the invention, the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. The invention further relates to a semiconductor structure. |
| 申请公布号 |
US2015243549(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201314422596 |
申请日期 |
2013.09.06 |
| 申请人 |
Soitec |
发明人 |
Letertre Fabrice;Kononchuk Oleg |
| 分类号 |
H01L21/762;H01L27/12;C30B29/68;B32B7/12;B32B9/04 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating a pseudo-substrate comprising the steps of:
providing a single crystal ingot; providing a handle substrate; cutting a thin slice from the single crystal ingot; and attaching the thin slice to the handle substrate to form a pseudo-substrate; wherein the thickness of the thin slice is substantially equal or inferior to a critical thickness below which the slice, if taken alone, is no longer mechanically stable. |
| 地址 |
Crolles Cedex FR |
