| 发明名称 |
Control of FET Back-Channel Interface Characteristics |
| 摘要 |
A method and structure for control of FET back-channel interface characteristics of an integrated circuit by implanting of selected implantation species at or near a device interface accessible during manufacture of the integrated circuit using layer transfer technology, without adversely affecting the structure or characteristics of a principal front-side FET. |
| 申请公布号 |
US2015243548(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414192728 |
申请日期 |
2014.02.27 |
| 申请人 |
PEREGRINE SEMICONDUCTOR CORPORATION |
发明人 |
Miscione Anthony Mark;Cable James S. |
| 分类号 |
H01L21/762;H01L21/265;H01L29/78 |
主分类号 |
H01L21/762 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for control of FET back-channel interface characteristics during fabrication of an integrated circuit using a layer transfer process, the integrated circuit having at least an active device layer, including the step of implanting selected material at or within a FET back channel interface of the integrated circuit to control electrical characteristics of such interface without implanting such material through the active device layer. |
| 地址 |
San Diego CA US |
