| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
In one embodiment, a method of manufacturing a semiconductor device includes forming a first mask layer on a workpiece layer. The method further includes forming a concave portion in the workpiece layer by first etching using the first mask layer. The method further includes forming a second mask layer on the workpiece layer in which the concave portion is formed. The method further includes processing the concave portion of the workpiece layer by second etching using the second mask layer. |
| 申请公布号 |
US2015243512(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414291209 |
申请日期 |
2014.05.30 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
KISHI Kazuki;Iguchi Tadashi;Kido Nozomi |
| 分类号 |
H01L21/308;H01L21/02 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a first mask layer on a workpiece layer; forming a concave portion in the workpiece layer by first etching using the first mask layer; forming a second mask layer on the workpiece layer in which the concave portion is formed; and processing the concave portion of the workpiece layer by second etching using the second mask layer. |
| 地址 |
Minato-ku JP |
