| 发明名称 |
BULK ACOUSTIC WAVE RESONATOR HAVING DOPED PIEZOELECTRIC LAYER |
| 摘要 |
In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element. For a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer. |
| 申请公布号 |
US2015244347(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414191771 |
申请日期 |
2014.02.27 |
| 申请人 |
Avago Technologies General IP (Singapore) Pte. Ltd |
发明人 |
Feng Chris;Nikkel Phil;Choy John;Grannen Kevin J.;Yeh Tangshiun |
| 分类号 |
H03H9/54;H03H9/58;H03H9/205 |
主分类号 |
H03H9/54 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A bulk acoustic wave (BAW) resonator, comprising:
a first electrode having a first electrode thickness; a second electrode having a second electrode thickness; and a piezoelectric layer having a piezoelectric layer thickness and being disposed between the first and second electrodes, the piezoelectric layer comprising a piezoelectric material doped with at least one rare earth element, wherein for a particular acoustic coupling coefficient (kt2) value and a series resonance frequency (Fs) of the BAW resonator, the first electrode thickness and the second electrode thickness are each greater than a thickness of a first electrode and a thickness of a second electrode of a BAW resonator comprising an undoped piezoelectric layer. |
| 地址 |
Singapore SG |
