发明名称 |
PLASMA ASSISTED ATOMIC LAYER DEPOSITION TITANIUM OXIDE FOR CONFORMAL ENCAPSULATION AND GAPFILL APPLICATIONS |
摘要 |
The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction. |
申请公布号 |
US2015243883(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414187145 |
申请日期 |
2014.02.21 |
申请人 |
Lam Research Corporation |
发明人 |
Swaminathan Shankar;Pasquale Frank L.;LaVoie Adrien |
分类号 |
H01L43/12;H01L45/00;H01L43/08;C23C16/06;C23C16/455;C23C16/50;C23C16/52;H01L43/02;H01J37/32 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method of depositing a titanium dioxide encapsulation layer over memory stacks on a semiconductor substrate, comprising:
receiving a substrate having a plurality of magnetoresistive random access memory (MRAM) stacks or phase change random access memory (PCRAM) stacks thereon in a reaction chamber; flowing a titanium-containing reactant into the reaction chamber and allowing the titanium-containing reactant to adsorb onto the surface of the substrate; flowing an oxygen-containing reactant into the reaction chamber and allowing the oxygen-containing reactant to adsorb onto the surface of the substrate; and exposing the reaction chamber to plasma to drive a surface reaction between the titanium-containing reactant and the oxygen-containing reactant to thereby conformally deposit a titanium dioxide encapsulation layer over the plurality of MRAM stacks or PCRAM stacks. |
地址 |
Fremont CA US |