发明名称 |
III-V SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED CONTACTS |
摘要 |
A method including forming a pair of inner spacers along a vertical sidewall of a gate trench, gate trench extending into a III-V compound semiconductor-containing heterostructure, forming a gate conductor within the gate trench, removing a portion of a first dielectric layer selective to the gate conductor and the pair of inner spacers, forming a pair of outer spacers adjacent to the pair of inner spacers, the outer spacers are in direct contact with and self-aligned to the inner spacers, and forming a pair of source-drain contacts within an uppermost layer of the III-V compound semiconductor-containing heterostructure, the pair of source-drain contacts are self-aligned to the pair of outer spacers such that an edge of each individual source-drain contact is aligned with an outside edge of each individual outer spacer. |
申请公布号 |
US2015243773(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414187708 |
申请日期 |
2014.02.24 |
申请人 |
International Business Machines Corporation |
发明人 |
Basu Anirban;Majumdar Amlan;Shiu Kuen-Ting;Sun Yanning |
分类号 |
H01L29/778;H01L29/205;H01L29/423;H01L29/06;H01L21/324;H01L21/285;H01L21/762;H01L29/66;H01L21/02 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method comprising:
forming a pair of inner spacers along a vertical sidewall of a gate trench, the gate trench extending from a top surface of a first dielectric layer down to a channel layer of a III-V compound semiconductor-containing heterostructure, the first dielectric layer is above the III-V compound semiconductor-containing heterostructure; forming a gate conductor within the gate trench; removing a portion of the first dielectric layer selective to the gate conductor, the pair of inner spacers, and the III-V compound semiconductor-containing heterostructure; forming a pair of outer spacers adjacent to the pair of inner spacers and above the III-V compound semiconductor-containing heterostructure, the outer spacers are in direct contact with and self-aligned to the inner spacers; and forming a pair of source-drain contacts within an uppermost layer of the III-V compound semiconductor-containing heterostructure, the pair of source-drain contacts are self-aligned to the pair of outer spacers such that an edge of each individual source-drain contact is aligned with an outside edge of each individual outer spacer. |
地址 |
Armonk NY US |