| 发明名称 |
METHOD AND APPARATUS FOR POWER DEVICE WITH MULTIPLE DOPED REGIONS |
| 摘要 |
A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type. The device further includes a plurality of doped regions disposed within the well region. The doped regions are vertically and horizontally offset from each other. Each of the doped regions includes a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type. |
| 申请公布号 |
US2015243766(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414187950 |
申请日期 |
2014.02.24 |
| 申请人 |
Vanguard International Semiconductor Corporation |
发明人 |
TU Shang-Hui;HUANG Chih-Jen;CHANG Jui-Chun;LIN Shin-Cheng;HO Yu-Hao;LIN Wen-Hsin |
| 分类号 |
H01L29/66;H01L29/10;H01L29/78 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate having a first conductivity type; a drain region, a source region, and a well region disposed in the substrate, the well region being disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type; and a plurality of doped regions disposed in the well region, the doped regions being vertically and horizontally offset from each other, each of the doped regions comprising a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type. |
| 地址 |
Hsinchu TW |
