DIELECTRIC ISOLATED FIN WITH IMPROVED FIN PROFILE

摘要

A method of forming a fin structure that includes forming a plurality of fin structures from a bulk semiconductor substrate and forming a dielectric spacer on a sidewall of each fin structure in the plurality of fin structure. A semiconductor spacer is formed on a sidewall of the dielectric spacer. A dielectric fill is formed in the space between the adjacent fin structures. The semiconductor spacer and a portion of the fin structures that is present below a lower surface of the dielectric spacer are oxidized. Oxidizing a base portion of the fin structures produces a first strain and oxidizing the semiconductor spacer produces a second strain that is opposite the first strain.

主权项

1. A method for forming a fin structure comprising:
forming a plurality of fin structures from a bulk semiconductor substrate; forming a dielectric spacer on a sidewall of the plurality of fin structures; forming a semiconductor spacer on a sidewall of the dielectric spacer; etching an exposed portion of the bulk substrate that is present between the semiconductor spacer on adjacent fin structures to form a pedestal portion of the bulk substrate; forming a dielectric fill in the space between the adjacent fin structures; and annealing the semiconductor spacer and a portion of the plurality of fin structures that is present below a lower surface of the dielectric spacer, wherein said annealing the portion of the plurality of fin structures produces a first strain and said annealing the semiconductor spacer produces a second strain that is opposite the first strain.