| 主权项 |
1. A semiconductor device, comprising:
a substrate; a first circuit which is formed on the substrate and in which a power supply potential is set to a first voltage; an isolation region which is formed on the substrate and surrounds the first circuit except a part of the first circuit when seen in a plan view; a second circuit which is formed on the substrate and is positioned at an outer side of the isolation region when seen in the plan view, and in which a power supply potential is set to a second voltage lower than the first voltage; and a connection transistor which is formed on the substrate and is positioned at a portion of the circumference of the first circuit at which the isolation region is not provided, and which connects the second circuit to the first circuit, wherein the isolation region includes, an element isolation film, and a field plate electrode which overlaps the element isolation film and surrounds the first circuit when seen in the plan view, and which is positioned over the connection transistor, wherein a source and a drain of the connection transistor are opposite to each other through the field plate electrode when seen in the plan view, wherein the field plate electrode is divided into a first portion including a portion positioned over the connection transistor, and a second portion other than the first portion, and wherein the first portion of the field plate electrode comprises a portion that is located outside the connection transistor in the plan view. |
