发明名称 |
HERMETIC CVD-CAP WITH IMPROVED STEP COVERAGE IN HIGH ASPECT RATIO STRUCTURES |
摘要 |
Implementations described herein generally relate to methods for forming dielectric films in high aspect ratio features. In one implementation, a method for forming a silicon oxide layer is provided. A silicon-containing precursor gas is flown into a processing chamber having a substrate having a high aspect ratio feature disposed therein. Then a high frequency plasma is applied to the silicon-containing precursor gas to deposit a silicon-containing layer over the surface of the high aspect ratio feature. The processing chamber is purged to remove by-products from the silicon-containing layer deposition process. An oxygen-containing precursor gas is flown into the processing chamber. A high frequency plasma and a low frequency plasma are applied to the oxygen-containing precursor gas to form the silicon oxide layer. |
申请公布号 |
WO2015126590(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
WO2015US13539 |
申请日期 |
2015.01.29 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, ZONGBIN;SUDHEERAN, SHALINA DEEPA;SUNDARRAJAN, ARVIND;BHUSHAN, BHARAT |
分类号 |
H01L21/316;H01L21/205 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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