SEMICONDUCTOR SINGLE CRYSTAL AND POWER GENERATION METHOD USING SAME

摘要

Provided is a semiconductor single crystal (10) having an n-type semiconductor section (12), a p-type semiconductor section (14), and an intrinsic semiconductor section (16) positioned therebetween, wherein the intrinsic semiconductor section (16) has a smaller band gap than that of the n-type semiconductor section (12) and the p-type semiconductor section (14).