发明名称 |
METHOD FOR MAKING LIGHT EMITTING DIODES |
摘要 |
A method for making a LED comprises following steps. A substrate having a surface is provided. A first semiconductor layer, an active layer and a second semiconductor pre-layer is formed on the surface of the substrate. A patterned mask layer is applied on a surface of the second semiconductor pre-layer. A number of three-dimensional nano-structures is formed on the second semiconductor pre-layer and the patterned mask layer is removed. The substrate is removed and a first electrode is formed on a surface of the first semiconductor layer away from the active layer. A second electrode is formed to electrically connect with the second semiconductor pre-layer. |
申请公布号 |
US2015243836(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514700116 |
申请日期 |
2015.04.29 |
申请人 |
Tsinghua University ;HON HAI PRECISION INDUSTRY CO., LTD. |
发明人 |
JIN YUAN-HAO;LI QUN-QING;FAN SHOU-SHAN |
分类号 |
H01L33/00;H01L33/22;H01L33/40 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method for making a light emitting diode, comprising the following steps:
providing a substrate having a first surface; forming a first semiconductor layer, an active layer, and a second semiconductor pre-layer on the first surface; applying a patterned mask layer on a second semiconductor pre-layer surface, wherein the patterned mask layer comprises a plurality of linear walls aligned side by side, and a groove is defined between each adjacent linear walls to form an exposed portion of the second semiconductor pre-layer surface; etching the exposed portion and removing the patterned mask layer to form a plurality of three-dimensional nano-structures, wherein the plurality of three-dimensional nano-structures are linear protruding structures, and a cross-section of each linear protruding structure is an arc; removing the substrate to form an exposed first semiconductor layer surface located away from the active layer; covering the exposed first semiconductor layer surface by a first electrode; and electrically connecting a second electrode with the second semiconductor pre-layer. |
地址 |
Beijing CN |