发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF |
摘要 |
A semiconductor memory device includes a memory cell array including a plurality of memory cells and a plurality of redundancy memory cells, a fuse array to be programmed with information of a defective memory cell among the memory cells of the memory cell array, and a control unit suitable for setting up a program operation section for programming the fuse array in response to an external command, wherein when the control unit sets up the program operation section, the control unit sets up a refresh operation section for refreshing the memory cell array, which is terminated before the program operation section ends without overlapping with the program operation section. |
申请公布号 |
US2015243375(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414319966 |
申请日期 |
2014.06.30 |
申请人 |
SK hynix Inc. |
发明人 |
SONG Choung-Ki |
分类号 |
G11C29/00;G11C11/406;G11C17/16 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory device, comprising:
a memory cell array including a plurality of memory cells and a plurality of redundancy memory cells; a fuse array to be programmed with information of a defective memory cell among the memory cells of the memory cell array; and a control unit suitable for setting up a program operation section for programming the fuse array in response to an external command, wherein when the control unit sets up the program operation section, the control unit sets up a refresh operation section for refreshing the memory cell array, which is to be terminated before the program operation section ends without overlapping with the program operation section. |
地址 |
Gyeonggi-do KR |