发明名称 SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF
摘要 A semiconductor memory device includes a memory cell array including a plurality of memory cells and a plurality of redundancy memory cells, a fuse array to be programmed with information of a defective memory cell among the memory cells of the memory cell array, and a control unit suitable for setting up a program operation section for programming the fuse array in response to an external command, wherein when the control unit sets up the program operation section, the control unit sets up a refresh operation section for refreshing the memory cell array, which is terminated before the program operation section ends without overlapping with the program operation section.
申请公布号 US2015243375(A1) 申请公布日期 2015.08.27
申请号 US201414319966 申请日期 2014.06.30
申请人 SK hynix Inc. 发明人 SONG Choung-Ki
分类号 G11C29/00;G11C11/406;G11C17/16 主分类号 G11C29/00
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory cell array including a plurality of memory cells and a plurality of redundancy memory cells; a fuse array to be programmed with information of a defective memory cell among the memory cells of the memory cell array; and a control unit suitable for setting up a program operation section for programming the fuse array in response to an external command, wherein when the control unit sets up the program operation section, the control unit sets up a refresh operation section for refreshing the memory cell array, which is to be terminated before the program operation section ends without overlapping with the program operation section.
地址 Gyeonggi-do KR
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