发明名称 |
SEMICONDUCTOR DEVICE HAVING HIERARCHICALLY STRUCTURED WORD LINES |
摘要 |
Disclosed herein is a semiconductor device that includes: a memory cell array including sub-word lines, bit lines and memory cells arranged at intersections of the sub-word lines and the bit lines; a plurality of sub-word drivers each drives an associated one of the sub-word lines; and a plurality of main word drivers each supplies a main word signal having one of a selected-level potential and an unselected-level potential to an associated one of the sub-word drivers. Each of the sub-word drivers drives the associated one of the sub-word lines to an active level when an associated one of the main word signals has the selected-level potential, and drives the associated one of the sub-word lines to an inactive level when the associated one of the main word signals has the unselected-level potential. The unselected-level potential of the main word signals is variable depending on an operation mode. |
申请公布号 |
US2015243346(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201314429760 |
申请日期 |
2013.09.20 |
申请人 |
OHATA Munetoshi;EDO Sachiko;KOSHITA Gen;PS4 LUXCO S.A.R.L. |
发明人 |
Ohata Munetoshi;Edo Sachiko;Koshita Gen |
分类号 |
G11C11/408;G11C11/4074;G11C11/4097 |
主分类号 |
G11C11/408 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a memory cell array including a plurality of sub-word lines, a plurality of bit lines and a plurality of memory cells arranged at intersections of the sub-word lines and the bit lines; a plurality of sub-word drivers each drives an associated one of the sub-word lines; and a plurality of main word drivers each supplies a main word signal having one of a selected-level potential and an unselected-level potential to an associated one of the sub-word drivers, wherein each of the sub-word drivers drives the associated one of the sub-word lines to an active level when an associated one of the main word signals has the selected-level potential, and drives the associated one of the sub-word lines to an inactive level when the associated one of the main word signals has the unselected-level potential, and wherein the unselected-level potential of the main word signals is variable depending on an operation mode. |
地址 |
US |