发明名称 |
SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM |
摘要 |
Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern. |
申请公布号 |
US2015241787(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514619700 |
申请日期 |
2015.02.11 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YAEGASHI Hidetami |
分类号 |
G03F7/36;G03B27/52;G03D13/00 |
主分类号 |
G03F7/36 |
代理机构 |
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代理人 |
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主权项 |
1. A substrate processing method comprising:
a resist pattern forming process of forming a resist pattern on a substrate by performing a photolithography processing on the substrate; a side chain cutting process of cutting side chains of the resist pattern by irradiating energy ray on the resist pattern; and a metal processing process of causing a processing agent to enter the resist pattern in the side chains are cut, and causing a metal to be infiltrated into the resist pattern through the processing agent. |
地址 |
Tokyo JP |