发明名称 SUBSTRATE PROCESSING METHOD, PROGRAM, COMPUTER-READABLE STORAGE MEDIUM, AND SUBSTRATE PROCESSING SYSTEM
摘要 Provided is a substrate processing method in which a photolithography processing is performed on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.
申请公布号 US2015241787(A1) 申请公布日期 2015.08.27
申请号 US201514619700 申请日期 2015.02.11
申请人 TOKYO ELECTRON LIMITED 发明人 YAEGASHI Hidetami
分类号 G03F7/36;G03B27/52;G03D13/00 主分类号 G03F7/36
代理机构 代理人
主权项 1. A substrate processing method comprising: a resist pattern forming process of forming a resist pattern on a substrate by performing a photolithography processing on the substrate; a side chain cutting process of cutting side chains of the resist pattern by irradiating energy ray on the resist pattern; and a metal processing process of causing a processing agent to enter the resist pattern in the side chains are cut, and causing a metal to be infiltrated into the resist pattern through the processing agent.
地址 Tokyo JP