| 摘要 |
<p>The present invention relates to a semiconductor device and, especially, to a technology which is able to screen a contact fault of the semiconductor device. This present invention includes: a driving signal generation unit which selectively drives a sub-word line driving signal in response to a sub-word line selection signal; a sub-word line driving unit which drives the sub-word line in response to a main word-line selection signal and the sub-word line driving signal; and a leakage path blocking unit which blocks a leakage path formed from the sub-word line through the driving signal generation unit in response to a test signal.</p> |
