发明名称 |
INTEGRATED CIRCUIT HAVING MULTIPLE THRESHOLD VOLTAGES |
摘要 |
In one aspect there is set forth herein an integrated circuit having a first plurality of field effect transistors and a second plurality of field effect transistor, wherein field effect transistors of the first plurality of field effect transistors each have a first gate stack and wherein field effect transistors of the second plurality of field effect transistors each have a second gate stack, the second gate stack being different from the first gate stack by having a metal layer common to the first gate stack and the second gate stack that includes a first thickness at the first gate stack and a second thickness at the second gate stack. |
申请公布号 |
US2015243563(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414189085 |
申请日期 |
2014.02.25 |
申请人 |
GLOBALFOUNDRIES INC. |
发明人 |
LEE Bongki;LIU Jin Ping;JOSHI Manoj;ELLER Manfred;PAL Rohit;CARTER Richard J.;SAMAVEDAM Srikanth Balaji |
分类号 |
H01L21/8234;H01L29/49;H01L21/28;H01L27/088 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit comprising:
a substrate structure; a first plurality of field effect transistors formed in the substrate structure and a second plurality of field effect transistors formed in the substrate structure; wherein field effect transistors of the first plurality of field effect transistors each have a first gate stack and a first channel polarity; wherein field effect transistors of the second plurality of field effect transistors each have a second gate stack and the first channel polarity, the second gate stack being different from the first gate stack by having a conductive layer common to the first gate stack and the second gate stack that includes a first thickness at the first gate stack and a second thickness at the second gate stack; wherein field effect transistors of the first plurality of field effect transistors each have a first Vt, and wherein field effect transistors of the second plurality of field effect transistors each have a second Vt, the second Vt being different from the first Vt. |
地址 |
Grand Cayman KY |