发明名称 |
METHODS OF PATTERNING LINE-TYPE FEATURES USING A MULTIPLE PATTERNING PROCESS THAT ENABLES THE USE OF TIGHTER CONTACT ENCLOSURE SPACING RULES |
摘要 |
A method involving identifying a pattern for an overall target cut mask to be used in patterning line-type features that includes a target non-rectangular opening feature having an inner, concave corner, decomposing the overall target cut mask pattern into first and second sub-target patterns, wherein the first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of the target non-rectangular opening feature and the second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of the target non-rectangular opening feature, the first and second openings overlapping adjacent the inner, concave corner, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, wherein at least one of the first and second sets of mask data is generated based upon an identified contact-to-end-of-cut-line spacing rule. |
申请公布号 |
US2015243515(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201414186396 |
申请日期 |
2014.02.21 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Yuan Lei;Kye Jongwook;Levinson Harry J. |
分类号 |
H01L21/308;H01L21/768;H01L21/306;G06F17/50 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
identifying a pattern for an overall target cut mask to be used in patterning a plurality of line-type features to be formed above a semiconductor substrate, wherein said overall target cut mask comprises a target non-rectangular opening feature having an inner, concave corner; decomposing said overall target cut mask pattern into a first sub-target pattern and a second sub-target pattern, wherein said first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of said target non-rectangular opening feature and said second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of said target non-rectangular opening feature, said first and second openings having an area of overlap at a location corresponding to a location of said inner, concave corner in said overall target cut mask; identifying a line-type feature that is to be cut by making cuts corresponding to said first and second openings, wherein, when cut, said cut line-type feature will have a cut end; identifying a contact that is to be formed so as to conductively contact said cut line-type feature at a location adjacent said cut end of said cut line-type feature; identifying a contact-to-end-of-cut-line spacing rule for said contact based upon a spacing between one of said first and second rectangular-shaped openings and a nearest edge of said contact at the intended location where said contact is to engage said cut line-type feature; generating a first set of mask data corresponding to said first sub-target pattern; and generating a second set of mask data corresponding to said second sub-target pattern, wherein at least one of said first and second sets of mask data is generated based upon the identified contact-to-end-of-cut-line spacing rule. |
地址 |
Grand Cayman KY US |