发明名称 |
Method of Manufacturing Semiconductor Device and Substrate Processing Method |
摘要 |
A method of manufacturing a semiconductor device for forming a thin film having characteristics of low permittivity, high etching resistance and high leak resistance is provided. The method includes: forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a source gas containing the predetermined element and a halogen element to the substrate; (b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate; (c) supplying a nitriding gas as a second reactive gas to the substrate; and (d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed. |
申请公布号 |
US2015243498(A1) |
申请公布日期 |
2015.08.27 |
申请号 |
US201514706221 |
申请日期 |
2015.05.07 |
申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
HIROSE Yoshiro;SANO Atsushi;Orihashi Yugo;HASHIMOTO Yoshitomo;SHIMAMOTO Satoshi |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
forming a film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle comprising:
(a) supplying a source gas containing the predetermined element and a halogen element to the substrate;(b) supplying a first reactive gas containing three elements including carbon, nitrogen and hydrogen wherein a number of carbon atoms in each molecule of the first reactive gas is greater than that of nitrogen atoms in each molecule of the first reactive gas to the substrate;(c) supplying a nitriding gas as a second reactive gas to the substrate; and(d) supplying an oxidizing gas as a third reactive gas to the substrate, wherein (a) through (d) are non-simultaneously performed. |
地址 |
Tokyo JP |