SUBSTRATE TREATMENT DEVICE, PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, AND PROGRAM

摘要

[Problem] To monitor the situation inside a treatment furnace and to suppress reductions in yield that are caused by particles generated inside the treatment furnace. [Solution] The present invention comprises: a transfer chamber that has a gas supply mechanism provided to a side surface thereof, and in which a substrate is transferred to a substrate holding tool; a treatment furnace for treating the substrate held by the substrate holding tool; a furnace opening through which the transfer chamber and the treatment furnace are in communication; a lid that has the substrate holding tool mounted thereupon, and that closes the furnace opening; a raising/lowering mechanism that raises and lowers the lid; a measuring apparatus that is arranged so as to sandwich and face the substrate holding tool and the gas supply mechanism inside the transfer chamber, and that measures the number of particles at the furnace opening; and a control unit that is configured so as to control the raising/lowering mechanism and the measuring apparatus such that the measuring apparatus begins measuring the number of particles when the closing of the furnace opening by the lid is released.