| 摘要 |
<p>A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include forming a plurality of bottom electrode connections (302), depositing a bottom electrode layer (310) over the bottom electrode connections, performing an etch to remove portions of the bottom electrode layer to form at least one upwardly-pointing bottom electrode region (340) above the bottom electrode connections, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region (350) and a top electrode (352) over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top.</p> |
