| 发明名称 |
MAGNETORESISTIVE SENSOR |
| 摘要 |
In accordance with one implementation of the described technology, an apparatus comprises a sensor structure including a top shield which includes a top shield synthetic antiferromagnetic layer and a bottom shield including a bottom shield synthetic antiferromagnetic layer, wherein the bottom synthetic antiferromagnetic shield layer acts as a seed layer structure. |
| 申请公布号 |
US2015243307(A1) |
申请公布日期 |
2015.08.27 |
| 申请号 |
US201414192388 |
申请日期 |
2014.02.27 |
| 申请人 |
Seagate Technology LLC |
发明人 |
Lu Zhengqi;Hassett Daniel;McElhinney Paula;Xu Jiansheng |
| 分类号 |
G11B5/39 |
主分类号 |
G11B5/39 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus comprising:
a sensor structure, including a top shield including a top shield synthetic antiferromagnetic (SAF) layer and a bottom shield including a bottom shield SAF layer, wherein the bottom SAF shield layer acts as a seed layer. |
| 地址 |
Cupertino CA US |
