| 摘要 |
The present disclosure relates to a solid-state imaging element that can achieve further reduction in size, a method for producing said solid-state imaging element, and an electronic device. This solid-state imaging element comprises a photoelectric conversion film that performs photoelectric conversion by light emitted from the back surface side of a semiconductor substrate. Further, a charge storage layer is formed for each pixel so as to contact the photoelectric conversion film on the back surface of the semiconductor substrate. A transfer path section is formed so as to extend from the charge storage layer to the vicinity of the front surface of the semiconductor substrate. In the vicinity of the back surface side of the semiconductor substrate, a memory section is arranged from the transfer path section via a charge transfer gate. The photoelectric conversion film is formed by layering a highly light-blocking material on the back surface of the semiconductor substrate. This technique is applicable, for example, to a back-surface-emission global-shutter-method CMOS image sensor. |
