PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING

摘要

The photosensitization chemical-amplification type resist material according to the present invention is for use in a two-step-exposure lithography process and comprises (1) a developable base component and (2) a component that generates a photosensitizer and an acid upon light exposure. The component (2) comprises the ingredient (a) only among (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photo-acid generator, or comprises any two or all of the three ingredients (a) to (c).