发明名称 METHOD AND APPARATUS FOR PASSIVATING CRYSTALLINE SILICON SOLAR CELLS
摘要 The present invention generally provides a high throughput substrate processing system that is used to form one or more regions of a solar cell device. In one configuration of a processing system, one or more solar cell passivating or dielectric layers are deposited and further processed within one or more processing chambers contained within the high throughput substrate processing system. The processing chambers may be, for example, plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, physical vapor deposition (PVD) or sputtering chambers, thermal processing chambers (e.g., RTA or RTO chambers), substrate reorientation chambers (e.g., flipping chambers) and/or other similar processing chambers.
申请公布号 WO2015126439(A1) 申请公布日期 2015.08.27
申请号 WO2014US35335 申请日期 2014.04.24
申请人 APPLIED MATERIALS, INC. 发明人 PONNEKANTI, HARI, K.;POLYAK, ALEXANDER, S.;L'HEUREUX, JAMES;LIU, YONGSHENG;KARISIDDAPPA, MARULASIDDESWARA;STEWART, MICHAEL, P.;NGUYEN, VAN, H.;UPADHYE, BAHUBALI, S.;MURTHY, CH. P.P.C. SRINIVASA;HAMMOND, EDWARD;KAPSASKIS, DIONYSIO;LANE, CHRISTOPHER, T.
分类号 H01L31/18;H01L21/02;H01L21/66;H01L31/042 主分类号 H01L31/18
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