METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL AND SILICON SINGLE CRYSTAL

摘要

The present invention is a method for manufacturing a silicon single crystal, the method being for growing silicon single crystal by the Czochralski process and being characterized in that a silicon single crystal is grown such that the diffusion distance of point defects in the silicon single crystal is equal to or greater than the radius of the silicon single crystal, with the thermal history of a central portion of a silicon single crystal from a melting point (Tm) to a grown-in defect formation end temperature (Td) being conditions therefor. Due to this configuration, the method for manufacturing a silicon single crystal can be provided with which, without requiring expensive additional equipment for the manufacturing of single crystals to be installed or the like, point defects can be diffused toward the side surface of the single crystal and the formation of grown-in defects and the mixture of Ni regions and Nv regions can be prevented at low cost.