SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. A semiconductor device includes an active pin which protrudes from a substrate in a first direction and is extended in a second direction intersecting with the first direction, a gate electrode which is extended in a third direction intersecting with the second direction on the active pin, a trench which is adjacent to the gate electrode and is formed in the active pin, and a semiconductor pattern which is filled in a trench. The trench includes a first sub trench and a second sub trench arranged in the lower part of the first sub trench. A first width which is the maximum width in the second direction of the first sub trench is different from a second width which is the maximum width in the second direction of the second sub trench. A first depth which is the maximum depth in the first direction of the first sub trench is different from a second depth which is the maximum depth in the first direction of the second sub trench.