| 摘要 |
Method and apparatus for a tunable laser device. In one aspect, a tunable laser device comprises a first doped cladding layer on a semiconductor substrate, a first waveguide layer of essentially undoped piezoelectric material on a top surface of the first doped cladding layer, an active layer on the top surface of the first waveguide layer, a second waveguide layer of essentially undoped piezoelectric material on the top surface of the active layer, a longitudinal structure parallel to a longitudinal axis of the semiconductor device on a top surface of the second waveguide layer comprising a doped semiconductor material, and a longitudinal interdigitated transducer (IDT) formed on the top surface of the second waveguide layer or on the bottom surface of the first waveguide layer, the IDT extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (SAW) in a direction parallel to the longitudinal axis. |
| 主权项 |
1. A process for forming a semiconductor device, comprising:
forming a first doped cladding layer on a semiconductor substrate, the first doped cladding layer having a top surface and a bottom surface, the bottom surface in contact with the semiconductor substrate; forming a first waveguide layer of essentially undoped piezoelectric material on the top surface of the first doped cladding layer, the first waveguide layer having a top surface and a bottom surface, the bottom surface in contact with the top surface of the first doped cladding layer; forming an active layer on the top surface of the first waveguide layer, the active layer having a top surface and a bottom surface, the bottom surface in contact with the top surface of the first waveguide layer; forming a second waveguide layer of essentially undoped piezoelectric material on the top surface of the active layer, the second waveguide layer having a top surface and a bottom surface, the bottom surface in contact with the top surface of the active layer; forming a second doped cladding layer on the top surface of the second waveguide layer, the second doped cladding layer having a top surface and a bottom surface, the bottom surface in contact with the top surface of the second waveguide layer; etching a first portion of the second doped cladding layer from the top surface of the second doped cladding layer to form a longitudinal structure from a second portion of the second doped cladding layer, the longitudinal structure being in a direction parallel to a longitudinal axis of the semiconductor device; and forming a first longitudinal interdigitated comb structure on one of the top surface of the second waveguide layer or the bottom surface of the first waveguide layer, the interdigitated comb structure and the essentially undoped piezoelectric material being a interdigitated transducer (IDT) extending longitudinally in a direction parallel to the longitudinal axis and being arranged to, in response to a signal from a signal generator, generate a surface acoustic wave (SAW) in a direction parallel to the longitudinal axis. |
